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Aktive Komponenten

SiC Mosfets

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Topologie	Sperrspannung [V]	RDS on [mOhm]	Nennstrom [A]	Nennstrom [mA]	Nennstrom [25°]	Betriebstemperatur[°C]	Produkt Feature	Produkt Status
GP2T020A120X-SBT	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	sawn on blue tape		1200	20						in production	Anfragen
GP2T020A120X	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	unsawn wafer		1200	20						in production	Anfragen
GP2T040A120X-SBT	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	sawn on blue tape		1200	40						in production	Anfragen
GP2T040A120X	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	unsawn wafer		1200	40						in production	Anfragen
GP2T020A120U	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-3L	Discrete	1200	20	119	0,119	86			in production	Anfragen
GP2T020A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	20	119	0,119	86	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving	in production	Anfragen
GP2T040A120U	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-3L	Discrete	1200	37	63	0,063	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*	in production	Anfragen
GP2T040A120H	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4L	Discrete	1200	37	63	0,063	47	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Anfragen
GP2T040A120J	SemiQ	SiC Diskret	SiC Mosfets	Aktive Komponenten	TO-247-7L	Discrete	1200	38	66	0,066	49	-55 to 175	• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving	in production	Anfragen